PHOTOLUMINESCENCE OF SINGLE INAS QUANTUM DOTS OBTAINED BY SELF-ORGANIZED GROWTH ON GAAS
PHOTOLUMINESCENCE OF SINGLE INAS QUANTUM DOTS OBTAINED BY SELF-ORGANIZED GROWTH ON GAAS
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DOI：
10.1103/physrevlett.73.716
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发表时间：
1994-08-01
影响因子：
8.6
通讯作者：
BASTARD, G
中科院分区：
文献类型：
--
作者：
MARZIN, JY;GERARD, JM;BASTARD, G
我们目前的光致发光数据的GaAs分子束外延生长的InAs量子点。通过减少小梅萨结构中发射点的数量，我们证明了光谱中的窄线，每个窄线与单个InAs点相关。除了这种技术所允许的统计分析，我们的结果表明，短的捕获和弛豫时间到点。这种方法打开了通往高质量的易于制造的单半导体量子点的详细光学研究的路线。
We present photoluminescence data on InAs quantum dots grown by molecular beam epitaxy on GaAs. Through the reduction of the number of emitting dots in small mesa structures, we evidence narrow lines in the spectra, each associated with a single InAs dot. Beyond the statistical analysis allowed by this technique, our results indicate short capture and relaxation times into the dots. This approach opens the route towards the detailed optical study of high quality easily fabricated single semiconductor quantum dots.