Synthesis of large-scale atomic-layer SnS2 through chemical vapor deposition
Synthesis of large-scale atomic-layer SnS2 through chemical vapor deposition
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DOI：
10.1007/s12274-017-1436-3
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发表时间：
2017-03
期刊：
影响因子：
9.9
通讯作者：
Gonglan Ye;Y. Gong;Sidong Lei;Yongmin He;Bo Li;Xiang Zhang;Zehua Jin;Liangliang Dong;J. Lou;R. Vajtai;Wu Zhou;P. Ajayan
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文献类型：
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作者：
Gonglan Ye;Y. Gong;Sidong Lei;Yongmin He;Bo Li;Xiang Zhang;Zehua Jin;Liangliang Dong;J. Lou;R. Vajtai;Wu Zhou;P. Ajayan
二维金属二硫属化合物薄膜由于其厚度小，在电子学和光电子学领域具有潜在的应用前景，引起了人们的广泛关注。单层SnS2的带隙约为2.6 eV，具有由两个硫原子层和一个锡原子层组成的八面体晶格。到目前为止，已经有有限的报告，大规模和高质量的SnS2原子层的生长和研究其作为半导体的性能。在这里，我们报告的化学气相沉积（CVD）生长的原子层SnS2具有大的晶体尺寸和均匀性。此外，通过改变生长时间，可以将层的数量从单层改变到几层，再到大块。采用扫描透射电子显微镜分析了原子结构，并展示了不同层的2 H堆叠多型。所得的SnS2晶体用作光电探测器，外量子效率高达150%，这表明光电应用的前景。
Two-dimensional layers of metal dichalcogenides have attracted much attention because of their ultrathin thickness and potential applications in electronics and optoelectronics. Monolayer SnS2, with a band gap of ~2.6 eV, has an octahedral lattice made of two atomic layers of sulfur and one atomic layer of tin. Till date, there have been limited reports on the growth of large-scale and high quality SnS2atomic layers and the investigation of their properties as a semiconductor. Here, we report the chemical vapor deposition (CVD) growth of atomic-layer SnS2with a large crystal size and uniformity. In addition, the number of layers can be changed from a monolayer to few layers and to bulk by changing the growth time. Scanning transmission electron microscopy was used to analyze the atomic structure and demonstrate the 2H stacking poly-type of different layers. The resultant SnS2crystals is used as a photodetector with external quantum efficiency as high as 150%, suggesting promise for optoelectronic applications.