Study of lattice damage produced by neon implantation into AlInN
Study of lattice damage produced by neon implantation into AlInN
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DOI：
10.1007/s10854-008-9708-z
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发表时间：
2009-03
期刊：
影响因子：
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通讯作者：
A. Majid;Akbar Ali;J. Zhu;Y. Wang
中科院分区：
文献类型：
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作者：
A. Majid;Akbar Ali;J. Zhu;Y. Wang
用氖离子注入MOCVD生长的纤锌矿结构AlInN/GaN异质结，注入剂量范围为10 ~（14）~ 9 × 10 ~（15）ions/cm ~ 2。通过X射线衍射进行结构表征，并在退火前后监测应变的剂量依赖性。在低剂量方案中观察到应变增加，直至在5 × 1015 cm − 2剂量下饱和，并随着剂量的进一步增加而降低。应变积累是由于单个缺陷的聚集，而应变水平的降低是由于固定汇的缺陷捕获。
Neon ions were implanted into MOCVD grown wurtzite AlInN/GaN hetrostructures with dose ranging from 1014to 9 × 1015ions/cm2. Structural characterization was carried out by X-ray diffraction and the dose dependence of strain was monitored before and after annealing. An increase in strain was observed in low dose regime until it saturates at a dose of 5 × 1015cm−2and decreased with further increase in dose. Strain accumulation is attributed to the clustering of individual defects whereas decrease in level of strain is due to the capturing of defects by fixed sinks.