Magnetic and optical properties of GaMnN magnetic semiconductor
Magnetic and optical properties of GaMnN magnetic semiconductor
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DOI：
10.1063/1.1348302
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发表时间：
2001-02
影响因子：
4
通讯作者：
M. Zając;R. Doradziński;J. Gosk;J. Szczytko;M. Lefeld-sosnowska;M. Kamińska;A. Twardowski;M. Palczewska;E. Grzanka;W. Gȩbicki
中科院分区：
文献类型：
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作者：
M. Zając;R. Doradziński;J. Gosk;J. Szczytko;M. Lefeld-sosnowska;M. Kamińska;A. Twardowski;M. Palczewska;E. Grzanka;W. Gȩbicki
用氨热法生长了Mn含量高达x=0.005的Ga1−xMnxN微晶样品，并用多种方法对其进行了研究。X射线衍射图显示了六方GaN相的特征衍射线，其中掺杂了来自Mn3N相的少量贡献(<；5%)。拉曼光谱显示了纯GaN的特征峰和可能与Mn诱导的晶格无序有关的模式。电子自旋共振和磁化强度测量与主要的自旋Mn2+(D5)组态相一致，自旋S=5/2，这是材料顺磁行为的原因。
Microcrystalline Ga1−xMnxN samples with Mn content up to x=0.005 were grown by an ammonothermal method and were studied using various techniques. X-ray diffraction showed characteristic diffraction lines for hexagonal GaN phase mixed with a small contribution (<5%) from the Mn3N2 phase. Raman spectra exhibited characteristic peaks of pure GaN and modes that could be associated with Mn-induced lattice disorder. Electron spin resonance and magnetization measurements were consistent with the dominant Mn2+(d5) configuration of spin S=5/2 which is responsible for the observed paramagnetic behavior of the GaMnN material.