Ultralow Voltage Manipulation of Ferromagnetism
Ultralow Voltage Manipulation of Ferromagnetism
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DOI：
10.1002/adma.202001943
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发表时间：
2020-05
影响因子：
29.4
通讯作者：
B. Prasad;Yen-Lin Huang;R. Chopdekar;Zuhuang Chen;James J. Steffes;Sujit Das;Qian Li;Mengmeng Yang;Chia-Ching Lin;T. Gosavi;D. Nikonov;Z. Qiu;L. Martin;B. Huey;I. Young;J. Íñiguez;S. Manipatruni;R. Ramesh
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文献类型：
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作者：
B. Prasad;Yen-Lin Huang;R. Chopdekar;Zuhuang Chen;James J. Steffes;Sujit Das;Qian Li;Mengmeng Yang;Chia-Ching Lin;T. Gosavi;D. Nikonov;Z. Qiu;L. Martin;B. Huey;I. Young;J. Íñiguez;S. Manipatruni;R. Ramesh
基于自旋传递扭矩的自旋电子元件具有片上存储的潜力，但由于所需的大电流密度，它们的能量消耗很大。相比之下，电场驱动的磁电存储元件可以在电容位移电荷的情况下工作，并有可能达到1-10µJ cm−2的开关操作。在这里，显示了磁阻元件的磁电开关，工作在200 mV或以下，具有降低到100 mV的路径。在多铁性BiFeO_3中，通过等价La替代和厚度调整，结合了相位失谐，将开关能量密度扩展到≈10µJ cm−2。这项工作为实现阿焦耳级非易失性存储器提供了一个模板。
Spintronic elements based on spin transfer torque have emerged with potential for on‐chip memory, but they suffer from large energy dissipation due to the large current densities required. In contrast, an electric‐field‐driven magneto‐electric storage element can operate with capacitive displacement charge and potentially reach 1–10 µJ cm−2 switching operation. Here, magneto‐electric switching of a magnetoresistive element is shown, operating at or below 200 mV, with a pathway to get down to 100 mV. A combination of phase detuning is utilized via isovalent La substitution and thickness scaling in multiferroic BiFeO3 to scale the switching energy density to ≈10 µJ cm−2. This work provides a template to achieve attojoule‐class nonvolatile memories.