Defect generation in InGaN/GaN light-emitting diodes under forward and reverse electrical stresses
Defect generation in InGaN/GaN light-emitting diodes under forward and reverse electrical stresses
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DOI：
10.1016/j.microrel.2003.06.001
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发表时间：
2003-12-01
影响因子：
1.6
通讯作者：
Arthur, SD
中科院分区：
文献类型：
--
作者：
Cao, XA;Sandvik, PM;Arthur, SD
研究了 GaN/InGaN 单量子阱发光二极管 (LED) 在高注入电流 (150 A/cm(2)) 和反向偏压 (-20 V) 应力下的电学和光学退化。在受到反向偏压的器件中观察到正向和反向电流的隧道分量显着增加。然而，受应力的 LED 表现出最小的光学特性退化。对于承受高正向电流的器件，在低注入区域观察到光强度随应力时间单调下降，并伴随着正向漏电流的增加，但在高电流下测量的光输出发现正应力效应。这些退化行为可以通过不同的机制在 LED 中缓慢产生点缺陷来解释，即，在高注入电流的器件中，InGaN 有源区域中热致缺陷的形成，以及在高反向偏压应力下，器件中包覆层中的碰撞电离导致的破坏性微结构变化。 (C) 2003 Elsevier Ltd. 保留所有权利。
Electrical and optical degradations of GaN/InGaN single-quantum-well light-emitting diodes (LEDs) under high-injection current (150 A/cm(2)) and reverse-bias (-20 V) stresses were investigated. A substantial increase in the tunneling components of both forward and reverse currents was observed in the devices subjected to reverse biases. However, the stressed LEDs exhibited minimal degradation of optical characteristics. For devices subjected to high forward currents, a monotonic decrease in light intensities with stress time, accompanied by an increase of forward leakage current, was observed in the low-injection region, but a positive stress effect was found on the light output measured at high currents. These degradation behaviors can be explained by slow generation of point defects in the LEDs via different mechanisms, i.e., thermally induced defect formation in the InGaN active region in the devices subjected to high-injection currents, and destructive microstructual changes as a result of impact ionization in the cladding layer in the devices under high reverse-bias stress. (C) 2003 Elsevier Ltd. All rights reserved.