Room temperature piezoelectric displacement detection via a silicon field effect transistor
Room temperature piezoelectric displacement detection via a silicon field effect transistor
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DOI：
10.1063/1.3271525
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发表时间：
2009-12-07
影响因子：
4
通讯作者：
Yamaguchi, H.
中科院分区：
文献类型：
--
作者：
Mahboob, I.;Nishiguchi, K.;Yamaguchi, H.
嵌入有二维电子气的机电振荡器电容耦合到硅场效应晶体管（Si-FET）。由机械运动引起的压电电压调制通过Si-FET的电流，使得能够监测机电振荡器的位置。当Si-FET被偏置在其最佳点时，运动感应的压电电压可以被放大，导致对于131 kHz GaAs谐振器的6 × 10（-1/2）mHz（-1/2）的位移灵敏度，这是全电室温检测方案的最高记录之一。(C)2009年美国物理学会。[doi：10.1063/1.3271525]
An electromechanical oscillator embedded with a two dimensional electron gas is capacitively coupled to a silicon field effect transistor (Si-FET). The piezovoltage induced by the mechanical motion modulates the current passing through the Si-FET enabling the electromechanical oscillator's position to be monitored. When the Si-FET is biased at its optimal point, the motion induced piezovoltage can be amplified resulting in a displacement sensitivity of 6 x 10(-12) mHz(-1/2) for a 131 kHz GaAs resonator which is among the highest recorded for an all-electrical room temperature detection scheme. (C) 2009 American Institute of Physics. [doi:10.1063/1.3271525]