Temperature measurement in AlGaN/GaN High-Electron-Mobility Transistors using micro-Raman scattering spectroscopy
Temperature measurement in AlGaN/GaN High-Electron-Mobility Transistors using micro-Raman scattering spectroscopy
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DOI：
10.1051/epjap:2005025
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发表时间：
2005-05
影响因子：
1
通讯作者：
R. Aubry;C. Dua;J. Jacquet;F. Lemaire;P. Galtier;B. Dessertenne;Y. Cordier;M. diForte-Poisson;S. Delage
中科院分区：
文献类型：
--
作者：
R. Aubry;C. Dua;J. Jacquet;F. Lemaire;P. Galtier;B. Dessertenne;Y. Cordier;M. diForte-Poisson;S. Delage
高功率射频器件的性能会随着工作温度的升高而降低(例如，电子迁移率的降低会影响截止频率并降低器件的可靠性)。因此，器件温度的确定是器件拓扑优化的关键问题。在这项工作中，我们用显微拉曼光谱测量了生长在硅衬底和蓝宝石衬底上的AlGaN/GaN高电子迁移率晶体管在偏压下的温度变化。对4 mm显影器件进行了16W以下的温度测量，测得峰值温度为650K。评估了在两种不同衬底上生长的类似器件的热阻差异。比较了不同器件拓扑结构的热阻，优化了器件设计。
High power RF device performance decreases as operation temperature increases (e.g. decreasing electron mobility affects cut-off frequencies and degrades device reliability). Therefore determination of device temperature is a key issue for device topology optimisation. In this work the temperature variation of AlGaN/GaN high-electron-mobility transistors grown either on silicon or sapphire substrate under bias operation was measured by micro Raman scattering spectroscopy. Temperature measurements up to power dissipation of 16 W for 4 mm development devices were carried out and a peak temperature of 650 K was determined. The difference of thermal resistance for similar devices grown on the two different substrates was assessed. The thermal resistances of different device topologies were compared to optimise the component design.