Initial oxidation processes of H-terminated Si(100) surfaces studied by high-resolution electron energy loss spectroscopy
Initial oxidation processes of H-terminated Si(100) surfaces studied by high-resolution electron energy loss spectroscopy
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高分辨率电子能量损失谱研究 H 封端 Si(100) 表面的初始氧化过程
DOI：
10.1143/jjap.35.1069
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发表时间：
1996
影响因子：
1.5
通讯作者：
Y. Yasuda
中科院分区：
文献类型：
--
作者：
H. Ikeda;K. Hotta;S. Furuta;S. Zaima;Y. Yasuda
利用高分辨率电子能量损失谱研究了室温和300℃条件下h端Si(100)-1 x -1表面的初始氧化过程。研究发现，在氧覆盖率为0.4之前，氧原子会吸附在表面硅原子的两个背键位点中的一个上，在连续氧化过程中，其他吸附位点如其他背键位点和/或Si-Si二聚体位点被氧原子占据。当一个表面Si原子有两个Si- o键时，可以观察到Si- o -Si键的结构弛豫，并认为这是由于Si- o键的力常数的变化引起的。
The initial oxidation processes of H-terminated Si(100)-1 x 1 surfaces have been investigated using high-resolution electron energy loss spectroscopy at room temperature and 300°C. It has been found that oxygen atoms adsorb on one of the two back-bond sites of a surface Si atom until the oxygen coverage is 0.4 and in the sequential oxidation process, other adsorption sites such as the other back-bond sites and/or Si-Si dimer-bond sites, become occupied by oxygen atoms. The structural relaxation in Si-O-Si bonds is observed when a surface Si atom has two Si-O bonds, and is considered to originate from the change in the force constant of Si-O bonds.