MOCVD自催化法在Si(100)衬底上生长InP/InGaAs核壳结构纳米线
MOCVD自催化法在Si(100)衬底上生长InP/InGaAs核壳结构纳米线
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DOI：
10.3788/fgxb20123303.0294
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发表时间：
2012-03
期刊：
影响因子：
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通讯作者：
缪国庆
中科院分区：
文献类型：
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作者：
张登巍;缪国庆
采用金属有机化学气相沉积法在Si（100）衬底上生长无催化剂的InP/InGaAs核壳纳米线。这些纳米线与au催化剂的核壳纳米线具有完全不同的性能。通过扫描电镜观察，我们发现在InP纳米线上生长InGaAs核后，InP纳米线顶部的催化剂已经转变为晶体。同时，纳米线的直径大大增加，而长度变化不大。x射线衍射图表明，催化剂的转变是由于在PH3保护下，InGaAs核心生长前的温度升高所致。通过透射电镜和能量色散x射线能谱分析，证明催化剂的转变先于InGaAs芯的生长，并被InGaAs覆盖，与纳米线侧壁相同。
Catalyst-free InP/InGaAs core-shell nanowires were grown on Si(100) substrates by metal-organic chemical vapor deposition.These nanowires have quite different properties to Au-catalyst core-shell nanowires.By using scanning electron microscope,we found that the catalyst at the top of the InP nanowires had been transformed into crystal after the InGaAs core grown on them.Meanwhile,the diameter of the nanowires has greatly increased with their length changed quite little.The X-ray diffraction patterns indicate that the transformation of the catalyst is attributed to the temperature rise under PH3 protection before InGaAs core growth.By transmission electron microscope and energy dispersive X-ray spectroscopy,it is proved that the transformation of catalyst is prior to the InGaAs core growth and is cover by InGaAs which is same to the nanowires sidewall.