Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
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DOI：
10.1109/led.2016.2519680
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发表时间：
2016-01
影响因子：
4.9
通讯作者：
M. Hua;Yunyou Lu;Sheng-gen Liu;Cheng Liu;K. Fu;Yong Cai;Baoshun Zhang;K. J. Chen
中科院分区：
文献类型：
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作者：
M. Hua;Yunyou Lu;Sheng-gen Liu;Cheng Liu;K. Fu;Yong Cai;Baoshun Zhang;K. J. Chen
在这封信中，我们展示了一个集成的过程，说明AlN/氮化硅钝化与高性能（即低泄漏和高击穿）的低压化学气相沉积（LPCVD）氮化硅栅极介质的GaN基MIS-HEMT的兼容性。结果表明，AlN/SiNx钝化结构在LPCVD-SiNx淀积过程中经受780 °C高温后仍保持其上级抑制电流崩塌的能力。AlN/SiNx钝化被证明是明显优于LPCVD-SiNx钝化提供小的动态罗恩退化，特别是在高漏极偏压开关与VDS > 100 V。
In this letter, we demonstrate an integrated process that illustrates the compatibility of AlN/SiNx passivation with high-performance (i.e. low leakage and high breakdown) low-pressure chemical vapor deposition (LPCVD) SiNx gate dielectric for GaN-based MIS-HEMT. It is shown that the AlN/SiNx passivation structure maintains its superior capability of suppressing the current collapse after enduring high temperature of 780 °C during the LPCVD-SiNx deposition. The AlN/SiNx passivation is shown to be significantly better than the LPCVD-SiNx passivation by delivering small dynamic RON degradation, especially under high drain bias switching with VDS > 100 V.