Compensating the Degradation of Near-Infrared Absorption of Black Silicon Caused by Thermal Annealing.
Compensating the Degradation of Near-Infrared Absorption of Black Silicon Caused by Thermal Annealing.
复制标题
补偿热退火引起的黑硅近红外吸收的退化。
DOI：
10.1186/s11671-016-1281-4
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发表时间：
2016-12
影响因子：
--
通讯作者：
Shen Z
中科院分区：
文献类型：
--
作者：
Wang Y;Gao J;Yang H;Wang X;Shen Z
我们建议使用薄Ag膜沉积来补救由高温热退火引起的黑Si的近红外（NIR）吸收的退化。沉积银膜后，在黑硅微结构表面形成了大量无规、不规则的银纳米颗粒，弥补了热退火对黑硅近红外吸收的影响。详细讨论了银纳米颗粒的形成及其对黑硅近红外吸收的贡献。
We propose the use of thin Ag film deposition to remedy the degradation of near-infrared (NIR) absorption of black Si caused by high-temperature thermal annealing. A large amount of random and irregular Ag nanoparticles are formed on the microstructural surface of black Si after Ag film deposition, which compensates the degradation of NIR absorption of black Si caused by thermal annealing. The formation of Ag nanoparticles and their contributions to NIR absorption of black Si are discussed in detail.