Interaction of hydrogen and thermal donor defects in silicon
Interaction of hydrogen and thermal donor defects in silicon
复制标题
硅中氢与热施主缺陷的相互作用
DOI：
10.1063/1.98144
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发表时间：
1987
影响因子：
4
通讯作者：
W. C. Dautremont
中科院分区：
文献类型：
--
作者：
A. Chantre;S. Pearton;L. Kimerling;K. Cummings;W. C. Dautremont
我们用暂态电容和电流谱研究了氢与硅中热施主的相互作用。我们发现，在12 0 °C的氢等离子体暴露下，可以获得很大程度的热施主钝化(40倍)，剩余的电活性是由扰动的E(0.0 7)和E(0.15)施主状态引起的。在200 °C下的热处理几乎完全重新激活了这些样品中存在的低浓度热施主。提出了一个涉及氢的不同掺入位置的模型来解释结果。
We have studied the interaction of hydrogen with thermal donors in silicon using transient capacitance and current spectroscopy. We find that a large degree of thermal donor passivation (a factor of 40) can be achieved by hydrogen plasma exposure at 120 °C. The residual electrical activity is shown to arise from perturbed E(0.07) and E(0.15) donor states. Annealing at 200 °C almost completely reactivates the low concentration of thermal donors present in these samples. A model involving different incorporation sites for hydrogen is proposed to explain the results.