Automated simulation of 3-D crack propagation on bimaterial interfaces in semiconductor packages
Automated simulation of 3-D crack propagation on bimaterial interfaces in semiconductor packages
复制标题
自动模拟半导体封装中双材料界面上的 3D 裂纹扩展
DOI：
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发表时间：
2003
期刊：
影响因子：
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通讯作者：
A. F. Herr
中科院分区：
文献类型：
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作者：
A. F. Herr
对任意三维裂纹扩展的数值模拟可能是一个乏味且耗时的过程。对于在半导体封装中各种电子材料之间的界面上传播的 3D 裂纹尤其如此。除了准确地解释与界面裂纹相关的裂纹尖端应力场的特殊性质之外，系统地“推进”裂纹还必须基于有效的数值裂纹推进算法。在本研究中，描述了一种技术，该技术结合使用 ANSYS 有限元软件和 Lehigh 大学开发的专用有限元程序 FRAC3D，来模拟任意 3-D 裂纹的裂纹前沿扩展。该方法使用 Paris 和 Erdogan 开发的经典疲劳裂纹扩展速率“定律”来模拟循环加载条件下的稳定裂纹扩展。作为可靠性分析的一个实际例子，该方法应用于具有传播角裂纹的半导体封装。将结果与实际半导体封装中观察到的类似故障的照片进行比较。 SRC 补助金 826.002
The numerical simulation of the propagation of an arbitrary, three-dimensional crack can be a tedious, time-consuming process. This is especially true for 3-D cracks propagating on interfaces between various electronic materials in semiconductor packages. In addition to accurately account for the peculiar nature of the crack tip stress field associated with interface cracks, systematically “advancing” the crack must be based on an efficient numerical crack advance algorithm. In this study, a technique is described that combines the use of ANSYS finite element software and a specialized finite element program, FRAC3D, developed at Lehigh University, to simulate crack front propagation for arbitrary 3-D cracks. This method uses the classical fatigue crack growth rate “law” developed by Paris and Erdogan to simulate stable crack growth under cyclic loading conditions. As a practical example in reliability analysis, the method is applied to a semiconductor package with a propagating corner-crack. The results are compared to photographs of a similar failure observed in actual semiconductor packages. SRC Grant 826.002