Sol-gel derived PZT force sensor for scanning force microscopy
Sol-gel derived PZT force sensor for scanning force microscopy
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DOI：
10.1016/0254-0584(95)01647-d
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发表时间：
1996-04-01
影响因子：
4.6
通讯作者：
Suga, T
中科院分区：
文献类型：
--
作者：
Lee, C;Itoh, T;Suga, T
PZT(PZT)薄膜具有优异的压电性和铁电性，在微电子机械系统(MEMS)中得到了广泛的应用。提出了一种基于压电性的扫描力显微镜(SFM)压电力传感器的概念。文中对该器件的制作工艺和性能进行了说明。力传感器为悬臂式结构，尺寸为200×50×4.15微米，利用压电力传感器构建了紧凑型SFM力敏系统。用带有PZT力传感器的扫描隧道显微镜获得了1.0微米间距的清晰图像。PZT力传感器的灵敏度为0.44fC nm(-1)。这个值大约是氧化锌力传感器的值的3倍。用PZT代替氧化锌作为力传感器的压电体材料，提高了SFM的灵敏度。该PZT力传感器可以方便地应用于大规模扫描和低温、超高真空等恶劣环境中。
Many sensors and actuators made using Pb(Zr, Ti)O-3 (PZT) thin films have been proposed in microelectromechanical systems (MEMS), owing to its eminent piezoelectric and ferroelectric properties. A PZT force sensor of scanning force microscopy (SFM) is conceptualized by its piezoelectricity. The fabrication procedure and performance are interpreted in this paper. The force sensor is a cantilever shape with dimensions of 200 x 50 x 4.15 mu m. A compact force sensing system of SFM is constructed by using the piezoelectric force sensor. A clear image of 1.0 mu m pitch grating is derived by a SFM with a PZT force sensor. The sensitivity of the PZT force sensor is 0.44 fC nm(-1). This value is about 3 times the value of the ZnO force sensor. The sensitivity of the SFM is improved when PZT is used as the piezoelectric material for the force sensor, instead of ZnO. It is believed that this PZT force sensor is capable of being applied easily to use in large scale scanning and severe environments such as low temperature and ultrahigh vacuum.