Impact of symmetrized and Burt-Foreman Hamiltonians on spurious solutions and energy levels of InAs/GaAs quantum dots
Impact of symmetrized and Burt-Foreman Hamiltonians on spurious solutions and energy levels of InAs/GaAs quantum dots
复制标题
对称哈密顿量和 Burt-Foreman 哈密顿量对 InAs/GaAs 量子点的杂散解和能级的影响
DOI：
10.1088/1674-1056/19/8/088102
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发表时间：
2010-08-01
影响因子：
1.7
通讯作者：
Wang Zhan-Guo
中科院分区：
文献类型：
--
作者：
Gu Yong-Xian;Yang Tao;Wang Zhan-Guo
在八带k坐标系下，系统地研究了量子点能级的有限元计算方法。p方法。数值计算结果包括压电性、电子和空穴能级以及波函数.在能级计算中，无论使用Burt-Foreman还是对称化的哈密顿量，我们都观察到了虚假解。用不同的理论对SS进行了分析，发现椭圆度理论能更好地解释SS的起源，而对称化的哈密顿量更容易导致SS。在消除SS后，比较了两种哈密顿量模拟的能级，发现不同哈密顿量导致电子能级的差异大于空穴能级的差异，并且这种差异随着量子点尺寸的增大而减小。
We present a systematic investigation of calculating quantum dots (QDs) energy levels using finite element method in the frame of eight-band k . p method. Numerical results including piezoelectricity, electron and hole levels, as yell as wave functions are achieved. In the calculation of energy levels, we do observe spurious solutions (SSs) no matter Burt-Foreman or symmetrized Hamiltonians are used. Different theories are used to analyse the SSs, we find that the ellipticity theory can give a better explanation for the origin of SSs and symmetrized Hamiltonian is easier to lead to SSs. The energy levels simulated with the two Hamiltonians are compared to each other after eliminating SSs, different Hamiltonians cause a larger difference on electron energy levels than that on hole energy levels and this difference decreases with the increase of QD size.