Electrically pumped lasing from p-ZnO/n-GaN heterojunction diodes
Electrically pumped lasing from p-ZnO/n-GaN heterojunction diodes
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DOI：
10.1063/1.4740081
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发表时间：
2012-08
影响因子：
4
通讯作者：
G. Du;Wang Zhao;Guoguang Wu;Zhifeng Shi;Xiaochuan Xia;Yang Liu;H. Liang;Xin Dong;Yan Ma;Baolin Zhang
中科院分区：
文献类型：
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作者：
G. Du;Wang Zhao;Guoguang Wu;Zhifeng Shi;Xiaochuan Xia;Yang Liu;H. Liang;Xin Dong;Yan Ma;Baolin Zhang
采用金属有机物化学气相沉积法在n-GaN/Al 2 O3衬底上制备了磷掺杂p-ZnO薄膜，并制作了异质结器件。通过霍尔、电化学电容-电压和低温光致发光测量证实了器件的p型掺杂。在正向偏压下，p-ZnO：P/n-GaN异质结发光二极管出现随机紫外激光现象。UV发射峰集中在约379 nm处，并且从二极管的ZnO侧实现。提出的二极管提供了一个潜在的有价值的方式来实现未来的高效率ZnO激光器。
A phosphorus-doped p-ZnO layer was prepared on an n-GaN/Al2O3 substrate by metal-organic chemical vapor deposition, and a heterojunction device was fabricated. The p-type doping of the device was confirmed by Hall, electrochemical capacitance-voltage and low-temperature photoluminescence measurements. Under forward bias, a random ultraviolet (UV) lasing phenomenon was detected from the p-ZnO:P/n-GaN heterojunction light-emitting diode. The UV emission peak was centered at approximately 379 nm and was achieved from the ZnO side of the diode. The proposed diode provides a potentially valuable way to realize future high-efficiency ZnO lasers.