Energetics of Ni-induced vacancy line defects on Si(001).
Energetics of Ni-induced vacancy line defects on Si(001).
复制标题
Si(001) 上 Ni 诱导的空位线缺陷的能量。
DOI：
10.1103/physrevlett.75.3890
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发表时间：
1995
影响因子：
8.6
通讯作者：
Poelsema
中科院分区：
文献类型：
--
作者：
Zandvliet;Louwsma;Hegeman;Poelsema
用扫描隧道显微镜分析了Si（001）表面微量Ni引起的空位线缺陷。所发现的结构域结构服从由Zeppenfeld等人[Phys. Rev. Lett. 72，2737（1994）]对于具有长程相互作用的表面系统，衰减为L-2。从热致漂移的空位线缺陷，我们提取的这种远程排斥相互作用的强度，以及在相邻的二聚体行的空位之间的短程吸引力的相互作用。
Vacancy line defects on the Si(001) surface induced by small traces of Ni are analyzed with a scanning tunneling microscope. The domain structure that is found obeys the size relation derived by Zeppenfeld et al. [Phys. Rev. Lett. 72, 2737 (1994)] for surface systems with long-range interactions, decaying as L-2. From the thermally induced wandering of the vacancy line defects we extract the strength of this long-range repulsive interaction as well as the short-range attractive interaction between the vacancies in adjacent dimer rows.