Review–On Epitaxial Electrodeposition of Co, Cu, and Ru for Interconnect Applications
Review–On Epitaxial Electrodeposition of Co, Cu, and Ru for Interconnect Applications
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回顾——用于互连应用的 Co、Cu 和 Ru 外延电沉积
DOI：
10.1149/1945-7111/ac8771
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发表时间：
2022
影响因子：
3.9
通讯作者：
Gusley, Ryan R.
中科院分区：
文献类型：
--
作者：
Barmak, Katayun;Gusley, Ryan R.
对Co、Cu、Ru外延电沉积进行了比较和对比。用于电沉积所有三种金属的种子层是外延 Ru (0001) 膜，该膜在高温下沉积到蓝宝石 (0001) 基板上并在沉积后进行退火。讨论了电沉积膜和种子层的外延取向关系、外延失配应变、种子层与电沉积层的对称性的作用。此外，还讨论了欠电位沉积对薄膜成核和薄膜生长形貌的影响。结果表明，外延电沉积金属薄膜至数十纳米的厚度是很容易实现的。
Epitaxial electrodeposition of Co, Cu and Ru is compared and contrasted. The seed layer for electrodeposition of all three metals was an epitaxial Ru (0001) film that was deposited at an elevated temperature onto a sapphire (0001) substrate and annealed post deposition. The epitaxial orientation relationship of the electrodeposited film and the seed layer, the epitaxial misfit strain, the role of symmetry of the seed layer versus the electrodepositing layer is addressed. In addition, the impact of underpotential deposition on film nucleation, and the growth morphology of the films is discussed. It is shown that epitaxial electrodeposition of metallic films to thicknesses of tens of nanometers is readily achievable.