Bonding in Mg2si Studied with X-Ray Photoelectron Spectroscopy
Bonding in Mg2si Studied with X-Ray Photoelectron Spectroscopy
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DOI：
10.1021/j100023a033
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发表时间：
1995-06
期刊：
影响因子：
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通讯作者：
M. V. Buuren;F. Voermans;H. Kempen
中科院分区：
文献类型：
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作者：
M. V. Buuren;F. Voermans;H. Kempen
我们在超真空条件下在原子级清洁的Si（100）表面上制备了MgzSi样品，并用X射线光电子能谱研究了化学键的性质。Si和Mg之间的电荷转移的值来自XPS光谱，并与理论上确定的值进行比较。从理论上预测的电离度为9%，这与根据XPS谱的化学位移大小得出的8%的值吻合得很好。
We have prepared samples of MgzSi on atomically clean Si (100) surfaces under ultrahigh vacuum conditions and used X-ray photoelectronspectroscopy to study the nature of the chemical bond. Values for the charge transfer between Si and Mg are derived from the XPS spectra and compared with values determined theoretically. An ionicity of 9% was predicted from the theory, which agrees well with the value of 8% derived from thesize of the chemical shift associated with the XPS spectra.