GaN-on-SOI: Monolithically Integrated All-GaN ICs for Power Conversion
GaN-on-SOI: Monolithically Integrated All-GaN ICs for Power Conversion
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GaN-on-SOI：用于功率转换的单片集成全 GaN IC
DOI：
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发表时间：
2019
期刊：
影响因子：
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通讯作者：
B. D. Jaeger
中科院分区：
文献类型：
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作者：
X. Li;S. Stoffels;B. Bakeroot;D. Wellekens;B. Vanhove;T. Cosnier;R. Langer;D. Marcon;G. Groeseneken;S. Decoutere;N. Amirifar;K. Geens;M. Zhao;W. Guo;H. Liang;S. You;N. Posthuma;B. D. Jaeger
本文首次报道了基于绝缘体上硅（SOI）GaN基功率集成电路（IC）的研究。开发了特定的阶梯式（Al）GaN超晶格缓冲层和高度鲁棒的深沟槽隔离。包括HEMT、金属-绝缘体-金属（MIM）电容器、肖特基势垒二极管（SBD）、二维电子气（2DEG）电阻器和电阻器-晶体管逻辑（RTL）在内的各种组件被共同集成，与p-GaN技术兼容。在此基础上，集成驱动器的200 V GaN HEMT显示出了卓越的开关性能。采用集成片上驱动器的GaN半桥实现了48 V至1V单级降压转换器。此外，一个全GaN降压转换器包含一个智能控制脉宽调制（PWM）电路，死区时间控制，驱动器，和半桥的成功设计使用GaN IC平台工艺设计工具包（PDK）。
We report the first comprehensive research about GaN power integrated circuits (ICs) on GaN-on-SOI (silicon-on-insulator). Specific stepped (Al)GaN superlattice buffer and highly robust deep trench isolation are developed. Various components including HEMT, metal-insulator-metal (MIM) capacitor, Schottky barrier diode (SBD), two-dimensional electron gas (2DEG) resistor, and resistor-transistor logic (RTL) are co-integrated, compatible with the p-GaN technology. Based on these achievements, 200 V GaN HEMT with integrated driver shows an extraordinary switching performance. A 48V-to-1V single-stage buck converter is realized using a GaN half-bridge with integrated on-chip drivers. Further, an all-GaN buck converter containing a smart control pulse-width modulation (PWM) circuit, dead-time control, drivers, and half-bridge is successfully designed using the GaN IC platform process design kit (PDK).