Design and development of high-power piezoelectric ceramics through integration of crystallographic texturing and acceptor-doping

Design and development of high-power piezoelectric ceramics through integration of crystallographic texturing and acceptor-doping
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DOI:
10.1016/j.actamat.2020.116610
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发表时间:
2021-03
期刊:
影响因子:
9.4
通讯作者:
Hao Leng;Yongke Yan;Hairui Liu;M. Fanton;R. Meyer;S. Priya
Hao Leng;Yongke Yan;Hairui Liu;M. Fanton;R. Meyer;S. Priya
中科院分区:
材料科学1区
文献类型:
--
作者:
Hao Leng;Yongke Yan;Hairui Liu;M. Fanton;R. Meyer;S. Priya

文献摘要

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本研究展示了一种基于织构和受主掺杂的一体化方法,以实现具有软硬性能的大功率压电陶瓷。织构掺杂的0.24Pb(In1/2Nb1/2)O30.42PbTiO3PIN-PMN-PT(PIN-PMN-PT)陶瓷的压电系数和机电耦合系数都比无定形样品提高了33和31。这种增强的压电响应源于<001>取向颗粒固有的高压电性能和织构陶瓷中极化旋转的能垒降低。织构陶瓷中的BaTiO_3(BT)模板提高了陶瓷的四方性,从而改善了矫顽场,但降低了机械质量因数Q_(Min)。织构陶瓷Qm值的降低与Qm值的晶体依赖性以及小尺寸电畴的存在提高了电畴迁移率有关。BT含量为2%的织构陶瓷具有良好的软硬结合性能,测得D33=1517pC/N,Qm=11147,Ec=910.0kV/cm,tanδ=100.49%,在高功率压电领域具有广阔的应用前景。
This study demonstrates the integrated approach based upon texturing and acceptor doping for realizing a high-power piezoelectric ceramic with combined soft and hard properties. The textured Mn-doped 0.24 Pb(In1/2Nb1/2)O3-0.42 Pb(Mg1/3Nb2/3)O3-0.34 PbTiO3(PIN-PMN-PT) ceramic exhibits enhanced piezoelectric coefficientd33and electromechanical coupling factork31in comparison with random counterpart. This enhanced piezoelectric response originates from the combined intrinsic high piezoelectric properties of <001>-oriented grains, and reduced energy barrier for polarization rotation in textured ceramics. The BaTiO3(BT) template in textured ceramics increases the tetragonality degree which results in improved coercive fieldEcbut decreased mechanical quality factorQmin comparison with random counterpart. The decreasedQmvalues of textured ceramics are related to the crystallographic dependence ofQmand the enhanced domain mobility due to the existence of small size domains. The textured ceramic with 2 vol.% BT content exhibited an excellent combination of soft and hard piezoelectric properties, measured to be:d33= 517 pC/N,Qm= 1147,Ec= 10.0 kV/cm, and tan δ = 0.49%, which is highly promising for high power piezoelectric applications.