Cathode Luminescence from Si02 Layer Including Ge Nanoparticles Formed by Negative-Ion Implantation

Cathode Luminescence from Si02 Layer Including Ge Nanoparticles Formed by Negative-Ion Implantation
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来自包含通过负离子注入形成的Ge纳米粒子的SiO 2 层的阴极发光

DOI:
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发表时间:
2007
期刊:
Transactions of the Materials Research Society of Japan 32
影响因子:
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通讯作者:
Y. Gotoh and J. Ishikawa
Y. Gotoh and J. Ishikawa
中科院分区:
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文献类型:
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作者:
H. Tsuji;N. Arai;N. Gotoh;T. Minotani;K. Kojima;K. Adachi;H. Kotaki;K. Takahiro;T. Ishibashi;Y. Gotoh and J. Ishikawa

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