Electronic and spin structure of the wide-band-gap topological insulator: Nearly stoichiometric Bi2Te2S
Electronic and spin structure of the wide-band-gap topological insulator: Nearly stoichiometric Bi2Te2S
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DOI：
10.1103/physrevb.97.205113
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发表时间：
2018-05
影响因子：
3.7
通讯作者：
E. Annese;T. Okuda;E. Schwier;H. Iwasawa;K. Shimada;M. Natamane;M. Taniguchi;I. P. Rusinov;S. Eremeev;K. Kokh;V. Golyashov;O. Tereshchenko;E. Chulkov;A. Kimura
中科院分区：
文献类型：
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作者：
E. Annese;T. Okuda;E. Schwier;H. Iwasawa;K. Shimada;M. Natamane;M. Taniguchi;I. P. Rusinov;S. Eremeev;K. Kokh;V. Golyashov;O. Tereshchenko;E. Chulkov;A. Kimura
我们感谢来自圣彼得堡州立大学（批准号15.61.202.2015），托木斯克州立大学竞争力提高计划（项目号8.1.01.2017）和科学和创新的西班牙部（批准号FIS 2016 -75862-P）的部分支持。这项研究得到了俄罗斯科学基金会（电物理性质项目编号17-12-01047，理论计算项目编号18-12-00169）和俄罗斯基础研究基金会（晶体生长和结构表征项目编号17-08-00955）的部分支持。SV感谢国家科学院2013-2020年基础研究计划的支持。I.P.R.感谢俄罗斯联邦教育和科学部在政府计划Megagrants（国家任务编号3.8895.2017/P220）框架内的支持。A.K.由KAKENHI赠款第26247064号和第17 H 06138号资助。
We acknowledge partial support from the Saint Petersburg State University (Grant No. 15.61.202.2015), Tomsk State University competitiveness improvement program (Project No. 8.1.01.2017), and the Spanish Ministry of Science and Innovation (Grant No. FIS2016-75862-P). This study was partially supported by the Russian Science Foundation (Projects No. 17-12-01047, for the electrophysical properties, and No. 18-12-00169, for the theoretical calculations) and by the Russian Foundation for Basic Research (Project No. 17-08-00955, for the crystal growth and structural characterization). S.V.E. acknowledges support by the Fundamental Research Program of the State Academies of Sciences for 2013–2020. I.P.R. acknowledges support by the Ministry of Education and Science of the Russian Federation within the framework of the governmental program Megagrants (state task No. 3.8895.2017/P220). A.K. was financially supported by KAKENHI Grants No. 26247064 and No. 17H06138.