The insertion of the ALD diffusion barriers: An approach to improve the quality of the GaN deposited on Kapton by PEALD
The insertion of the ALD diffusion barriers: An approach to improve the quality of the GaN deposited on Kapton by PEALD
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DOI：
10.1016/j.apsusc.2021.150684
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发表时间：
2021-11
影响因子：
6.7
通讯作者：
Yingfeng He;L. Meiling;Huiyun Wei;Yimeng Song;Peng Qiu;Mingzeng Peng;Xinhe Zheng
中科院分区：
文献类型：
--
作者：
Yingfeng He;L. Meiling;Huiyun Wei;Yimeng Song;Peng Qiu;Mingzeng Peng;Xinhe Zheng
系统研究了生长温度（200–300 ℃）对通过等离子体增强原子层沉积（PEALD）直接沉积在 Kapton 上的氮化镓（GaN）性能的影响。随着生长温度的升高，GaN薄膜的O含量和表面粗糙度增加。此外，当生长温度超过250℃时，发现GaN在Kapton中的扩散行为。在这项研究中，提出了超薄ALD氧化铝（Al2O3）和氮化铝（AlN）薄膜，以了解它们是否可以减轻和/甚至抑制高温（≥250℃）GaN生长过程中界面扩散的负面影响。结果发现，沉积态 GaN 中的氧杂质显着减少。此外，我们观察到在整个生长过程中 GaN 扩散到 Kapton 中的情况完全受到抑制。此外，在 GaN 沉积之前引入 Al2O3 或 AlN 可以改善沉积在 Kapton 上的 GaN 的表面形态。
The influence of growth temperature (200–300 ℃) on the properties of gallium nitride (GaN) directly deposited on Kapton by plasma-enhanced atomic layer deposition (PEALD) has been systematically investigated. With increasing growth temperatures, the O content and surface roughness of the GaN thin films increase. Besides, the diffusion behavior of GaN in Kapton was found when the growth temperature exceeds 250 ℃. In this study, ultrathin ALD aluminum oxide (Al2O3) and aluminum nitride (AlN) films were proposed to see if they could alleviate and/or even suppress the negative effects of interface diffusion during high-temperature (≥250 ℃) GaN growth. It was found that oxygen impurities were significantly decreased within the as-deposited GaN. Furthermore, we observed a complete suppression of GaN diffusion into the Kapton throughout the entire growth process. Additionally, an introduction of either the Al2O3or AlN before the GaN deposition could improve the surface morphology of the GaN deposited on Kapton.