LASER EMISSION FROM PHOTONIC DOTS
LASER EMISSION FROM PHOTONIC DOTS
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光子点发射激光
DOI：
10.1063/1.119587
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发表时间：
1997
影响因子：
4
通讯作者：
H. Zull
中科院分区：
文献类型：
--
作者：
M. Röhner;J. Reithmaier;A. Forchel;F. Schafer;H. Zull
在具有离散光学模式光谱的光子半导体点中观察到激光发射。横向尺寸在 1 至 5 μm 之间的光子点通过在垂直方向上使用 AlAs/GaAs 布拉格镜以及在横向方向上使用蚀刻表面处的折射率不连续性来提供三维光学限制。在光泵浦结构中，激光发射发生在微腔的基模上。对于横向尺寸为 2.7 μm 的微腔结构，测量了 200 W/cm2 的外部阈值激发密度，这对应于每个微腔柱 0.15 μW 的极低内部光学激发功率。
Laser emission was observed in photonic semiconductor dots with a discretized optical mode spectrum. The photonic dots with lateral sizes between 1 and 5 μm provide a three-dimensional optical confinement by using in the vertical direction AlAs/GaAs Bragg mirrors and in the lateral directions the refractive index discontinuity at the etched surfaces. In the optically pumped structures, the laser emission takes place on the fundamental mode of the microcavities. External threshold excitation densities of 200 W/cm2, which correspond to a very low internal optical excitation power of 0.15 μW per microcavity post, were measured for microcavity structures with a lateral size of 2.7 μm.