Arsenic and phosphorus double ion implanted source/drain junction for 0.25and sub-0.25-μm MOSFET technology
Arsenic and phosphorus double ion implanted source/drain junction for 0.25and sub-0.25-μm MOSFET technology
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用于 0.25 微米和亚 0.25 微米 MOSFET 技术的砷和磷双离子注入源极/漏极结
DOI：
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发表时间：
1999
期刊：
影响因子：
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通讯作者：
Youngjong Lee
中科院分区：
文献类型：
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作者：
H. Lee;Youngjong Lee
针对 0.25 和亚 0.25/spl mu/m NMOSFET 技术提出了砷和磷双注入源极/漏极结。砷用于硅化物下方的浅高浓度区域，磷用于稍深的结，以提高结质量并降低结电容。在侧壁形成之后进行砷和磷双重注入。与仅砷注入的器件相比，双注入的源极/漏极结显示出反向漏电流的急剧减少并且对短沟道特性的影响很小。而且电路性能提高了约2.5%。
An arsenic and phosphorus double implanted source/drain junction is proposed for 0.25- and sub-0.25-/spl mu/m NMOSFET technology. Arsenic is for the shallow high concentration region beneath the silicide, and phosphorus is for the slightly deeper junction to increase junction quality and to reduce junction capacitance. The arsenic and phosphorus double implantation is performed after sidewall formation. The double implanted source/drain junction shows a drastic reduction of reverse leakage current and little effect on the short channel characteristics compared with an arsenic only implanted device. Moreover, the circuit performance is improved by about 2.5%.