Memristive operations demonstrated by gap-type atomic switches
Memristive operations demonstrated by gap-type atomic switches
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DOI：
10.1007/s00339-011-6317-0
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发表时间：
2011-02
期刊：
影响因子：
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通讯作者：
T. Hasegawa;Alpana Nayak;T. Ohno;K. Terabe;T. Tsuruoka;J. Gimzewski;M. Aono
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文献类型：
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作者：
T. Hasegawa;Alpana Nayak;T. Ohno;K. Terabe;T. Tsuruoka;J. Gimzewski;M. Aono
我们演示了使用间隙型Ag2S原子开关的记忆操作，其中Ag突起的生长和收缩是通过固体电化学反应控制的。除了传统的记忆操作，如使用金属氧化物的电阻随机存取存储器（reram）所提出和证明的，间隙型Ag2S原子开关也显示出新型的记忆操作，通过存储来自输入信号的信息而不改变其输出，直到输入足够数量的信号。这种新型记忆操作类似于神经可塑性中的学习过程，在神经可塑性中，人类大脑的组织会因经验而发生变化。
We demonstrate memristive operations using gap-type Ag2S atomic switches, in which the growth and shrinkage of an Ag protrusion are controlled by using solid-electrochemical reactions. In addition to conventional memristive operations such as those proposed and demonstrated by resistive random-access memories (ReRAMs) using metal oxide compounds, gap-type Ag2S atomic switches also show new types of memristive operations by storing information from input signals without changing their output until a sufficient number of signals are inputted. The new types of memristive operations resemble the learning process seen in neuroplasticity, where changes occur in the organization of the human brain as a result of experience.