Temperature dependence of exciton dynamics in poly(di-n-hexylsilane)
Temperature dependence of exciton dynamics in poly(di-n-hexylsilane)
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聚（二正己基硅烷）中激子动力学的温度依赖性
DOI：
10.1103/physrevb.63.073403
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发表时间：
2001
影响因子：
3.7
通讯作者：
M. Matsuda
中科院分区：
文献类型：
--
作者：
M. Shimizu;S. Suto;T. Goto;A. Watanabe;M. Matsuda
我们研究了聚二正己基硅烷薄膜在4 ~ 300 K和溶液在4 ~ 295 K的发光强度时间响应的温度依赖性。在这两种样品中，上升和衰减时间强烈依赖于在4 K下观察到的能量。在峰值能量处上升时间约为100 ps。在约110 K的薄膜和在295 K的溶液中，上升时间变得很小，衰减时间变得不那么依赖于能量随着温度的升高。在295 K的薄膜中，衰减时间与能量无关，上升时间小于5 ps。这些结果是由无序线性链中声子散射和辐射衰变的竞争过程所支配的激子动力学所解释的。结果表明，薄膜的时间响应对温度的敏感性是溶液的3倍。这种差异归因于薄膜和溶液中链间激子转移的存在和不存在。
We have investigated the temperature dependence of the time response of luminescence intensity in poly(di-$n$-hexylsilane) films in the range between 4 and 300 K and in solution at 4 and 295 K. In both samples, rise and decay times strongly depend on observed energy at 4 K. The rise time is about 100 ps at the peak energy. At about 110 K in films and at 295 K in solution, rise times become small and decay times become less dependent on energy with increasing temperature. In films at 295 K, decay times are independent of energy and rise times becomes less than 5 ps. These results are explained by the exciton dynamics governed by the competing processes of phonon scattering and radiative decay in disordered linear chains. It is found that the time response is more sensitive to temperature in films than in solution by the factor of 3. This difference is ascribed to the presence and the absence of interchain exciton transfer in films and in solution, respectively.