Room temperature operation of epitaxially grown Si/Si0.5Ge0.5/Si resonant interband tunneling diodes
Room temperature operation of epitaxially grown Si/Si0.5Ge0.5/Si resonant interband tunneling diodes
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外延生长 Si/Si0.5Ge0.5/Si 谐振带间隧道二极管的室温操作
DOI：
10.1063/1.122419
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发表时间：
1998
影响因子：
4
通讯作者：
D. Blanks
中科院分区：
文献类型：
--
作者：
S. Rommel;T. Dillon;M. Dashiell;H. Feng;J. Kolodzey;Paul R. Berger;P. Thompson;K. Hobart;R. Lake;A. Seabaugh;Gerhard Klimeck;D. Blanks
采用低温分子束外延生长的Si/Si0.5Ge0.5/Si异质结构，利用中心本征间隔剂和δ掺杂注入剂，在硅衬底上制备了带间共振隧道二极管。在生长过程中使用了370°C的低衬底温度，以确保高水平的掺杂。B δ掺杂峰降低了空穴在价带不连续处填充量子阱的势垒，而Sb δ掺杂通过产生深n+阱降低了n型体Si的掺杂要求。从生长硅片中研究的样品没有显示负差分电阻（NDR）的证据。研究了生长后快速退火温度对隧道二极管性能的影响。相比之下，在700°C和800°C下热处理1分钟的样品表现出NDR行为。结果表明，隧道二极管的峰谷电流比（PVCR）和峰谷电流密度与δ掺杂位置和退火条件密切相关。
Resonant interband tunneling diodes on silicon substrates are demonstrated using a Si/Si0.5Ge0.5/Si heterostructure grown by low temperature molecular beam epitaxy which utilized both a central intrinsic spacer and δ-doped injectors. A low substrate temperature of 370 °C was used during growth to ensure a high level of dopant incorporation. A B δ-doping spike lowered the barrier for holes to populate the quantum well at the valence band discontinuity, and an Sb δ-doping reduces the doping requirement of the n-type bulk Si by producing a deep n+ well. Samples studied from the as-grown wafers showed no evidence of negative differential resistance (NDR). The effect of postgrowth rapid thermal annealing temperature was studied on tunnel diode properties. Samples which underwent heat treatment at 700 and 800 °C for 1 min, in contrast, exhibited NDR behavior. The peak-to-valley current ratio (PVCR) and peak current density of the tunnel diodes were found to depend strongly on δ-doping placement and on the annea...