Complex Impedance of Fast Optical Transition Edge Sensors up to 30MHz
Complex Impedance of Fast Optical Transition Edge Sensors up to 30MHz
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DOI：
10.1007/s10909-018-1883-6
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发表时间：
2018-11-01
影响因子：
2
通讯作者：
Fukuda, D.
中科院分区：
文献类型：
--
作者：
Hattori, K.;Kobayashi, R.;Fukuda, D.
光学跃迁边缘传感器（TES）的特征在于非常快的响应，对于X射线和伽马射线比TES快几倍。为了提取与光学TES相关联的重要参数，需要测量高频（>1MHz）下的复阻抗，其中电路中的寄生阻抗和由于读出电路的特性阻抗中的不连续性引起的电信号的反射变得显著。这阻止了可以从复阻抗中提取的电流灵敏度的测量。在通常的设置中，很难建立考虑寄生阻抗和反射的电路模型。在这项研究中，我们提出了一种替代方法来估计传递函数，而不调查整个电路的细节。在此基础上，测量了30MHz范围内的复阻抗。这些参数是从阻抗中提取的，并与其他测量结果进行比较。使用这些参数，我们计算了能量分辨率的理论极限，并将其与测量的能量分辨率进行了比较。本文将讨论测量值与理论预测值偏差的原因。
Optical transition edge sensors (TESs) are characterized by a very fast response, of the order of times faster than TESs for X-ray and gamma-ray. To extract important parameters associated with the optical TES, complex impedances at high frequencies (>1MHz) need to be measured, where the parasitic impedance in the circuit and reflections of electrical signals due to discontinuities in the characteristic impedance of the readout circuits become significant. This prevents the measurements of the current sensitivity , which can be extracted from the complex impedance. In usual setups, it is hard to build a circuit model taking into account the parasitic impedances and reflections. In this study, we present an alternative method to estimate a transfer function without investigating the details of the entire circuit. Based on this method, the complex impedance up to 30MHz was measured. The parameters were extracted from the impedance and were compared with other measurements. Using these parameters, we calculated the theoretical limit on an energy resolution and compared it with the measured energy resolution. In this paper, the reasons for the deviation of the measured value from theoretically predicted values will be discussed.