Accurate measurements of second-order nonlinear optical coefficients of 6H and 4H silicon carbide
Accurate measurements of second-order nonlinear optical coefficients of 6H and 4H silicon carbide
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DOI：
10.1364/josab.26.001892
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发表时间：
2009-10
影响因子：
1.9
通讯作者：
Hiroaki Sato;M. Abe;I. Shoji;J. Suda;T. Kondo
中科院分区：
文献类型：
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作者：
Hiroaki Sato;M. Abe;I. Shoji;J. Suda;T. Kondo
采用旋转梅克条纹和楔形技术两种二次谐波产生方法，在1.064 μm的基波波长下测量了4H-SiC和6H-SiC的二阶非线性光学系数。对高质量 (0001) 和 (112´0) 平面样品的测量以及考虑多重反射效应的严格分析使我们能够准确确定非线性光学系数的大小。对于6H-SiC，获得的值为d31=6.7 pm/V、d15=6.5 pm/V、d33=-12.5 pm/V；对于 4H-SiC，d31=6.5 pm/V，d15=6.7 pm/V，d33=−11.7 pm/V。
The second-order nonlinear optical coefficients of 4H-SiC and 6H-SiC have been measured by use of two second-harmonic generation methods, the rotational Maker-fringe and wedge techniques, at the fundamental wavelength of 1.064 μm. Measurements on high-quality (0001) and (112¯0) plane samples as well as rigorous analyses taking into account the multiple-reflection effects allowed us to accurately determine the magnitudes of the nonlinear optical coefficients. The obtained values are d31=6.7 pm/V, d15=6.5 pm/V, and d33=−12.5 pm/V for 6H-SiC; and d31=6.5 pm/V, d15=6.7 pm/V, and d33=−11.7 pm/V for 4H-SiC.