Influence of sputtering pressure on optical constants of a-GaAs1?xNx thin films
Influence of sputtering pressure on optical constants of a-GaAs1?xNx thin films
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DOI：
10.1088/1674-4926/33/8/083002
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发表时间：
2012-08
影响因子：
5.1
通讯作者：
Ji Baoshan;Wang Yunhua;Zhou Lu;Bai Duanyuan;Qiao Zhongliang;Gao Xin;Bo Bao-xue
中科院分区：
文献类型：
--
作者：
Ji Baoshan;Wang Yunhua;Zhou Lu;Bai Duanyuan;Qiao Zhongliang;Gao Xin;Bo Bao-xue
Amorphous GaAs1−xNx (a-GaAs1−xNx) thin films have been deposited at room temperature by a reactive magnetron sputtering technique on glass substrates with different sputtering pressures. The thickness, nitrogen content, carrier concentration and transmittance of the as-deposited films were determined experimentally. The influence of sputtering pressure on the optical band gap, refractive index and dispersion parameters (Eo, Ed) has been investigated. An analysis of the absorption coefficient revealed a direct optical transition characterizing the as-deposited films. The refractive index dispersions of the as-deposited a-GaAs1−xNx films fitted well to the Cauchy dispersion relation and the Wemple model.
