Erratum: Spin injection into silicon in three-terminal vertical and four-terminal lateral devices with Fe/Mg/MgO/Si tunnel junctions having an ultrathin Mg insertion layer [Phys. Rev. B 96, 235204 (2017)]
Erratum: Spin injection into silicon in three-terminal vertical and four-terminal lateral devices with Fe/Mg/MgO/Si tunnel junctions having an ultrathin Mg insertion layer [Phys. Rev. B 96, 235204 (2017)]
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勘误表：在具有超薄 Mg 插入层的 Fe/Mg/MgO/Si 隧道结的三端垂直和四端横向器件中自旋注入硅 [Phys.
DOI：
10.1103/physrevb.97.199901
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发表时间：
2018
影响因子：
3.7
通讯作者：
Masaaki Tanaka
中科院分区：
文献类型：
--
作者：
Shoichi Sato;R. Nakane;T. Hada;Masaaki Tanaka
在我们原始论文的补充材料（SM）[34]中，考虑到Si中的耗尽区，我们推导了窄三端Hanle （N-3TH）信号的Eq.(S30)，并解释了自旋注入体系中N-3TH信号的缺失。通过求解近似电场分布Eq.（S26）下的一维自旋漂移-扩散方程Eq.(S27)，推导出N-3TH信号方程。方程中的边界条件。（S28a） - (S28c)引入错误，缺少电场漂移项。修正后的边界条件如下：
In the Supplemental Material (SM)[34] of our original paper, we derived Eq.(S30) for the narrower three-terminal Hanle (N-3TH) signal, taking into account the depletion region in Si, and explained the absence of the N-3TH signal in the spin injection regime. This N-3TH signal equation was derived by solving the one-dimensional (1D) spin drift-diffusion equation Eq.(S27) under the approximated electric-field distribution Eq.(S26). However, the boundary conditions in Eqs.(S28a)–(S28c) were erroneously introduced, and the drift term by the electric field was missing. The corrected boundary conditions are as follows: