Amorphous and crystalline In2O3-based transparent conducting films for photovoltaics
Amorphous and crystalline In2O3-based transparent conducting films for photovoltaics
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DOI：
10.1002/pssa.201600464
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发表时间：
2017-02-01
影响因子：
2
通讯作者：
Koida, Takashi
中科院分区：
文献类型：
--
作者：
Koida, Takashi
我们报道了使用低方阻和高透明特性的氢掺杂In_2O_3(In_2O_3：H)透明导电层来降低太阳能电池的电学和光学损耗。采用磁控溅射法制备了非晶态(a-)In_2O_3：H薄膜，采用固相晶化法制备了透明导电氧化物(TCO)薄膜。多晶(多)In_2O_3：H薄膜的电子迁移率(超过100 cm(2)V(-1)S(-1))分别是普通TCO薄膜的2倍和3倍。本文介绍了In_2O_3基TCO的电学性能现状，a-In_2O_3：H和多In_2O_3：H薄膜的结构和光电性能，着重介绍了薄膜的不均匀性和稳定性，以及双层TCO的电学性能。对这些高迁移率的TCO薄膜在太阳能电池中的应用前景也进行了描述。
We reported solar cells with reduced electrical and optical losses using hydrogen-doped In2O3 (In2O3:H) transparent conducting layers with low sheet resistance and high transparence characteristics. The transparent conducting oxide (TCO) films were prepared by solid-phase crystallization of amorphous (a-) In2O3:H films grown by magnetron sputtering. The polycrystalline (poly-) In2O3:H films exhibited electron mobilities (over 100cm(2)V(-1)s(-1)) 2 and 3 times greater than those of conventional TCO films. This paper describes (i) the current status of the electrical properties of In2O3-based TCO; (ii) the structural and optoelectrical properties of the a-In2O3:H and poly-In2O3:H films, focusing on the inhomogeneity and stability characteristics of the films; and (iii) the electrical properties of bilayer TCO. The potential of these high mobility TCO films for solar cells was also described.