Field-free spin-orbit torque switching in L10-FePt single layer with tilted anisotropy
Field-free spin-orbit torque switching in L10-FePt single layer with tilted anisotropy
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DOI：
10.1063/5.0077465
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发表时间：
2022-03-07
影响因子：
4
通讯作者：
Dong, Kaifeng
中科院分区：
文献类型：
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作者：
Tao, Ying;Sun, Chao;Dong, Kaifeng
在实际应用中，希望在具有高垂直磁各向异性（PMA）的薄膜中实现无场自旋-轨道转矩（SOT）开关。本文报道了在L1(0)-FePt单层中，利用MgO & lang；100 & rang;？8 &度；/ & lang;100 & rang；miscut衬底。研究发现，无场开关取决于施加脉冲电流的方向。只有当电流沿y（010）方向而不是沿x（100）方向时，才会发生无场开关，这可以归因于倾斜PMA引起的x-z平面对称性破缺。此外，在无场条件下，我们的FePt单层系统表现出稳定的多态磁开关行为和非线性突触特性。这项工作为实现L1(0)-FePt单层无场SOT开关铺平了道路，这将对自旋记忆器件和突触电子学产生重大影响。
For real-world applications, it is desirable to realize field-free spin-orbit torque (SOT) switching in thin films with high perpendicular magnetic anisotropy (PMA). In this paper, we report that field-free SOT switching in a L1(0)-FePt single layer with a large switching ratio of 26% is obtained by using a MgO & lang;100 & rang;?8 & DEG;/& lang;100 & rang; miscut substrate. It is found that field-free switching depends on the direction of the imposed pulse current. Only when the electric current is along the y (010)-direction but not along the x (100)-direction does field-free switching happen, which can be attributed to the tilted PMA induced symmetry breaking in the x-z plane. Furthermore, under the field-free condition, our FePt single layer system exhibits stable multi-state magnetic switching behavior and nonlinear synaptic characteristics. This work paves the way to realize field-free SOT switching in the L1(0)-FePt single layer, which will have significant impact on spin memory devices and synaptic electronics.