Spin transfer torque magnetic random-access memory: Towards sub-10 nm devices
Spin transfer torque magnetic random-access memory: Towards sub-10 nm devices
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自旋转移矩磁性随机存取存储器：迈向 10 nm 以下器件
DOI：
10.1109/icicdt.2018.8399772
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发表时间：
2018
期刊：
影响因子：
--
通讯作者：
B. Diény
中科院分区：
文献类型：
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作者：
N. Perrissin;S. Lequeux;N. Strelkov;Laurent Vila;L. Buda;S. Auffret;Ricardo C. Sousa;I. Prejbeanu;B. Diény
提出了一种提高垂直STT-MRAM小型化可扩展性的新方法。它是通过增加自由层的厚度来诱导垂直形状的各向异性（PSA）来实现的。因此，在PSA-STT-MRAM中，垂直各向异性主要来自于存储层的形状，而不再来自于与隧道势垒的界面各向异性。这种方法允许通过改变存储层的宽高比（厚度/直径）轻松地调整存储点的稳定性。本文主要介绍了PSA-MRAM的原理，并简要讨论了该器件的实际实现。
We present a new approach to increase the downsize scalability of perpendicular STT-MRAM. It is achieved by increasing the thickness of the free layer in order to induce a perpendicular shape anisotropy (PSA). Therefore, in PSA-STT-MRAM, the perpendicular anisotropy mainly arises from the shape of the storage layer and no longer from an interfacial anisotropy with the tunnel barrier. This approach allows to easily tune the stability of the memory point just by changing the aspect ratio (thickness / diameter) of the storage layer. The paper is mainly focused on presenting the theory of PSA-MRAM and briefly discusses practical realizations of such devices.