A Crystallographic Study on the Growth of Partially Faceted MnSn2 Phase during Solidification Process
A Crystallographic Study on the Growth of Partially Faceted MnSn2 Phase during Solidification Process
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凝固过程中部分刻面MnSn2相生长的晶体学研究
DOI：
10.3390/cryst8100380
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发表时间：
2018-09
期刊：
影响因子：
2.7
通讯作者：
Cui Jianzhong
中科院分区：
文献类型：
--
作者：
Li Lei;Bi Yuantong;Ban Chunyan;Zhang Haitao;Liu Tie;Wang Xiangjie;Esling Claude;Cui Jianzhong
用结晶学方法研究了锡锰合金凝固过程中MnSn2相的生长。结果表明，MnSn2晶体的无向球帽沿晶向快速生长，遵循连续生长机制，侧面为二维形核机制，形成低折射率的{100}和{110}晶面。界面结构分析表明，{100}晶面间距周期(IPSP)内的原子面的平均网状密度低于{011}晶面间距周期内的平均网状结构密度。这导致了更快的生长速度，从而缩短和消失了{100}面。因此，部分刻面(即非刻面球帽和刻面侧面)的MnSn2晶体在三维上遵循八角底/球帽几何模型(很少有晶体具有正方形底面)。
The growth of MnSn2 phase during the solidification process of Sn-Mn alloy was crystallographically investigated. The results show that the non-faced spherical caps of the MnSn2 crystals follow the continuous growth mechanism to grow rapidly along the <001> direction, while the side surfaces the two-dimensional nucleation mechanism to form the low index {100} and {110} facets. An interface structure analysis indicates that the atom planes within the {100} interplanar spacing period (IPSP) has a lower average reticular density than those within the {011} IPSP. This leads to the faster growth rates and thus the shortening and disappearance of the {100} side facets. As a consequence, the partially faceted (i.e., non-faceted spherical caps and faceted side surfaces) MnSn2 crystals follow an octagonal-base/spherical-cap geometric model (few crystals possess square bases) in three dimensions.
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DOI：
10.1016/0739-6260(91)90141-l
发表时间：
1991
期刊：
Micron and Microscopica Acta
影响因子：
--
作者：
Y. Ma;J. Gjønnes;J. Taftø
通讯作者：
Y. Ma;J. Gjønnes;J. Taftø
DOI：
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发表时间：
1972-01-01
期刊：
JOURNAL OF THE LESS-COMMON METALS
影响因子：
--
作者：
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通讯作者：
DAMSMA, H
DOI：
10.1002/chin.198620003
发表时间：
1986-05
期刊：
ChemInform
影响因子：
--
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通讯作者：
P. Norby;A. Christensen;E. Pedersen;R. Zingales;I. Vikholm;F. Urso;J. Weidlein;R. Zingaro
影响因子：
6
作者：
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通讯作者：
R. Liu;W.K Wang;D. Li;D. Herlach
影响因子：
1.5
作者：
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通讯作者：
S. Vasudevan;S. Nagalingam;R. Dhanasekaran;P. Ramasamy