Understanding metallic bonding: Structure, process and interaction by Rasch analysis

Understanding metallic bonding: Structure, process and interaction by Rasch analysis
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了解金属键合:通过 Rasch 分析的结构、过程和相互作用

DOI:
10.1080/09500693.2016.1219926
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发表时间:
2016
影响因子:
2.3
通讯作者:
Pey
Pey
中科院分区:
教育学3区
文献类型:
--
作者:
M. Cheng;Pey

文献摘要

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本文报道了对3006名10-12年级学生对金属键合理解的调查结果。该仪器是根据Chi的科学概念的本体论类别和文献中报道的学生对金属键合的理解而开发的。该仪器有两个部分。第一部分探讨学生对金属键合的理解:(a)金属的亚微观结构;(B)单个金属原子失去最外层电子形成“电子海”和八隅金属阳离子的过程;或(c)离域电子和金属阳离子之间的全方位静电力,即相互作用。第二部分评估学生对金属延展性的解释,例如(a)金属原子/阳离子的亚微观结构重排或(B)基于全方向静电力。该仪器通过Rasch模型进行了验证。心理测量评估表明,该仪器具有相当好的测量性能。结果表明,该量表能有效地测量学生对金属键合的理解程度。分析表明,结构,过程和相互作用的理解是一维的,并在增加的难度顺序。金属键合的教学,特别是通过使用图表,批评和基于模型的学习的影响,进行了讨论。
ABSTRACT This paper reports the results of a survey of 3006 Year 10–12 students on their understandings of metallic bonding. The instrument was developed based on Chi's ontological categories of scientific concepts and students' understanding of metallic bonding as reported in the literature. The instrument has two parts. Part one probed into students' understanding of metallic bonding as (a) a submicro structure of metals, (b) a process in which individual metal atoms lose their outermost shell electrons to form a ‘sea of electrons’ and octet metal cations or (c) an all-directional electrostatic force between delocalized electrons and metal cations, that is, an interaction. Part two assessed students' explanation of malleability of metals, for example (a) as a submicro structural rearrangement of metal atoms/cations or (b) based on all-directional electrostatic force. The instrument was validated by the Rasch Model. Psychometric assessment showed that the instrument possessed reasonably good properties of measurement. Results revealed that it was reliable and valid for measuring students' understanding of metallic bonding. Analysis revealed that the structure, process and interaction understandings were unidimensional and in an increasing order of difficulty. Implications for the teaching of metallic bonding, particular through the use of diagrams, critiques and model-based learning, are discussed.