Power Loss Analysis of Medium-Voltage Three-Phase Converters Using 15-kV/40-A SiC N-IGBT
Power Loss Analysis of Medium-Voltage Three-Phase Converters Using 15-kV/40-A SiC N-IGBT
复制标题
使用 15kV/40A SiC N-IGBT 的中压三相转换器的功率损耗分析
DOI：
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发表时间：
2016
影响因子：
5.5
通讯作者：
S. Bhattacharya
中科院分区：
文献类型：
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作者：
S. Madhusoodhanan;K. Mainali;A. Tripathi;A. Kadavelugu;D. Patel;S. Bhattacharya
与硅（Si）基器件相比，中压（MV）碳化硅（SiC）器件（诸如15-kV SiC N-绝缘栅双极晶体管（IGBT））具有更好的耐热能力。这些器件在高开关频率和高功率水平下也分别具有较低的开关和传导损耗。15 kV SiC IGBT的最大安全工作结温为175 °C。这使得使用该器件的MV转换器的高功率密度设计成为可能。采用强制风冷的散热器，用于消散转换器运行期间产生的热量。本文讨论了基于15 kV/40 A SiC N-IGBT的三相中压变流器的功率损耗分析。根据实验测得的损耗数据和装置的连续热运行试验，对变换器进行了热分析。它由COMSOL Multiphysics软件中的分析计算、PLECS热模拟和FEM模拟提供支持。硬件原型的转换器的开发和实验结果支持的分析。给出了硬开关并网变流器和软开关双有源桥式变流器的实验结果。本文主要研究变换器中的半导体损耗。
Medium-voltage (MV) silicon carbide (SiC) devices such as the 15-kV SiC N-insulated gate bipolar transistor (IGBT) have better thermal withstanding capability compared with silicon (Si)-based devices. These devices also have lower switching and conduction losses at high switching frequencies and high power levels, respectively. The maximum safe operating junction temperature for the 15-kV SiC IGBT is 175 °C. This enables high power density design of the MV converters using this device. Heat sink with forced air cooling is considered for dissipating the heat generated during converter operation. In this paper, the power loss analysis of three-phase MV converters based on 15-kV/40-A SiC N-IGBT is discussed. The converter thermal analysis is carried out based on the experimental loss data and the continuous heat-run test of the device. It is supported by analytical calculations, PLECS thermal simulations, and FEM simulations in COMSOL Multiphysics software. Hardware prototypes of the converters are developed and the experimental results support the analysis. Experimental results are given for both hard-switched grid-connected converter and soft-switched dual active bridge converter. The paper mainly focuses on the semiconductor losses in the converter.