Experimental validation of mechanical stress models by micro-raman spectroscopy-猫眼课题宝

DOI：

10.1109/esref.1996.888208

发表时间：

1996-11

期刊：

Proceedings of the 7th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis

影响因子：

通讯作者：

中科院分区：

其他

文献类型：

作者：

I. De Wolf;G. Pozzat;K. Pinardl;D. Howard;M. Ignat;S. Jain;H. Maes

它表明，显微拉曼光谱提供了一个独特的工具，为微电子器件的应力模型的验证。从描述器件中局部应力变化的分析或数值模型出发，计算相应的拉曼位移，并与数据进行比较。通过这种方式，对模型进行反馈。该技术被证明用于Si衬底上的条带（Si/sub 3/N/sub 4/，CoSi/sub 2/，W），但是可以应用于可以获得拉曼数据的任何器件。

It is shown that micro-Raman spectroscopy offers a unique tool for the validation of stress models for microelectronics devices. Starting from an analytical or numerical model that describes the variation of local stress in a device, the corresponding Raman shift is calculated and compared with the data. In this way feed-back is given to the model. This technique is demonstrated for stripes (Si/sub 3/N/sub 4/, CoSi/sub 2/, W) on a Si substrate, but can be applied to any device where Raman data can be obtained.

Experimental validation of mechanical stress models by micro-raman spectroscopy

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