Thin-Film Solar Cells-猫眼课题宝

DOI：

10.1142/9781786344496_0009

发表时间：

2002

期刊：

影响因子：

通讯作者：

中科院分区：

其他

文献类型：

作者：

A. Pudov;J. Sites;T. Nakada

在多晶薄膜铜(In1-xGaX)Se2(CIGS)太阳电池中，化学沉积的硫化锌作为一种替代硫化镉的缓冲层已经被研究。基于CBD-ZnS/CIGS异质结制备了效率高达18.1%的电池。本文根据电流-电压(J-V)曲线和光谱响应曲线对这些电池的性能和损耗进行了分析，并与高效CBD-CDS/CIGS和晶硅电池进行了比较。CBD-ZnS/CIGS器件有效地达到了电流记录CBD-CDS/CIGS电池的效率。硫化锌电池的优良电流和硫化镉电池优良的结点质量对电池整体性能的影响几乎相互抵消。近年来，含铜(In_(1-x)Ga_x)Se_2(CIGS)吸收层的薄膜太阳能电池取得了很高的效率。化学浴沉积(CBD)法制备的硫化镉(CDS)缓冲层是CIGS电池中常用的缓冲层。尽管具有ZnO/CBD-CDS/CIGS结构的电池具有高效率，但制造公司已经在寻找CBDCDS缓冲层的替代方案，该缓冲层可以消除对Cd的使用，并改善由短波长光产生的载流子的收集。一种很有前途的替代材料是硫化锌。它3.8 eV的带隙能量使它对几乎所有波长的太阳光谱都是透明的。相比之下，禁带宽度为2.4 eV的硫化镉对520 nm以下的波长具有很强的吸收能力。CBD-ZnS在CIGS基薄膜太阳电池中的应用已经取得了长足的进展。在青山学园大学研制成功了效率高达18.1%的ZnO/CBD-ZnS/CIGS太阳电池。我们给出了这些单元的性能和损耗分析，以及在其他地方制作的两个CBD-CDS/CIGS和Si比较单元。在CIGS薄膜上，用ZnSO4(0.10.3M)-氨水(5-8M，PH=10.5-11.0)-硫脲(0.4-0.8M)水溶液，在80oC下化学生长了CBD-ZnS缓冲层。X-射线光电子能谱(XPS)分析表明，CBD-ZnS薄膜中含有大量的氧，主要以氢氧化锌和氧化锌的形式存在。因此，我们将这种材料称为CBDZnS，因为它不是纯的ZnS，尽管它的光学带隙能量非常接近3.8 eV的单晶值。详细介绍了镁氟化物/氧化锌：Al/CBD-ZnS/CIGS/Mo/钠钙玻璃太阳电池的制备工艺。J-V特性是在日本质量协会(JQA)使用太阳模拟器在24℃、AM 1.5、100 mW/cm的照度下测量的。这个

Chemically deposited ZnS has been investigated as a buffer layer alternative to CdS in polycrystalline thin-film Cu(In1-xGax)Se2 (CIGS) solar cells. Cells with efficiency of up to 18.1 % based on CBD-ZnS/CIGS heterostructures have been fabricated. This paper presents the performance and loss analyses of these cells based on the current-voltage (J-V) and spectral response curves, as well as comparisons with high efficiency CBD-CdS/CIGS and crystalline silicon counterparts. The CBD-ZnS/CIGS devices have effectively reached the efficiency of the current record CBD-CdS/CIGS cell. The effects of the superior current of the ZnS cell and the superior junction quality of the CdS cell on overall performance nearly cancel each other. Thin-film solar cells with Cu(In1-xGax)Se2 (CIGS) absorbers have achieved high efficiencies in recent years. Cadmium sulfide (CdS) buffer layers prepared by chemical bath deposition (CBD) are commonly used in CIGS-based cells. Even though cells with the ZnO/CBD-CdS/CIGS structure have high efficiencies, manufacturing companies have sought alternatives to the CBDCdS buffer layer, which could eliminate the use of Cd and improve the collection of carriers generated by short-wavelength light. One promising alternative material is ZnS. Its band-gap energy (Eg) of 3.8 eV makes it transparent to practically all wavelengths of the solar spectrum. In contrast CdS, with its band gap of 2.4 eV, is highly absorbing for wavelengths below 520 nm. There has been a considerable progress in using CBD-ZnS in CIGS-based thin-film solar cells . ZnO/CBD-ZnS/CIGS solar cells with efficiency of up to 18.1 % have been fabricated at Aoyama Gakuin University. We present the performance and loss analyses 3) of these cells and also two CBD-CdS/CIGS and Si comparison cells made elsewhere. CBD-ZnS buffer layers were chemically grown on CIGS thin films using a ZnSO4 (0.10.3M)-ammonia (5-8 M, PH=10.5-11.0)-thiourea (0.4-0.8 M) aqueous solution at 80oC. X-ray photoelectron spectroscopy (XPS) analysis revealed that the CBD-ZnS film includes a large amount of oxygen in the form of Zn(OH)2 and ZnO. Therefore, we refer to this material as CBDZnS, since it is not pure ZnS, although its optical band-gap energy is very close to the 3.8-eV single-crystal value. The detailed fabrication process of a MgF2/ZnO:Al/CBD-ZnS/CIGS/Mo/soda-lime glass solar cell is described elsewhere. The J-V characteristics were measured at the Japan Quality Association (JQA) using a solar simulator under AM 1.5, 100 mW/cm illumination at 24oC. The

Thin-Film Solar Cells

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