Silicon and germanium nanowires: Growth, properties, and integration
Silicon and germanium nanowires: Growth, properties, and integration
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硅和锗纳米线：生长、特性和集成
DOI：
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发表时间：
2010
期刊：
影响因子：
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通讯作者：
Sukgeun Choi
中科院分区：
文献类型：
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作者：
S. Picraux;S. Dayeh;P. Manandhar;D. Perea;Sukgeun Choi
半导体纳米线是纳米材料研究中的一个广泛关注的领域，因为它能够制造具有块状材料中不可用的定制功能的一维结构。硅和锗纳米线受到特别关注，因为这些材料系统在当代微电子学中发挥着重要作用，并且具有从新型电子器件到分子水平传感和太阳能收集等应用的潜力。本文综述了气-液-固纳米线生长技术及其在硅和锗纳米线研究中的应用。
Semiconducting nanowires are an area of widespread interest in nanomaterials research because of the ability to fabricate one-dimensional structures with tailored functionalities not available in bulk materials. Silicon and germanium nanowires have received particular attention because of the important role played by these materials systems in contemporary microelectronics and their potential for applications ranging from novel electronic devices to molecular level sensing and to solar energy harvesting. This paper provides an overview of the widely used vapor-liquid-solid technique for nanowire growth and its application to our recent silicon and germanium nanowire studies.