High Aspect Ratio Ternary Zn1–xCdxO Nanowires by Electrodeposition for Light-Emitting Diode Applications
High Aspect Ratio Ternary Zn1–xCdxO Nanowires by Electrodeposition for Light-Emitting Diode Applications
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DOI:
10.1021/jp202608e
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发表时间:
2011-07
影响因子:
3.7
通讯作者:
O. Lupan;T. Pauporté;T. L. Bahers;I. Ciofini;B. Viana
中科院分区:
文献类型:
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作者:
O. Lupan;T. Pauporté;T. L. Bahers;I. Ciofini;B. Viana
We present a combined experimental and computational approach to study Zn1–xCdxO nanowires (NWs) and their integration in light-emitting diode (LED) structures. Self-standing Zn1–xCdxO NWs have been electrodeposited on fluorine-doped tin oxide and p-GaN substrates. The electrochemical behavior has been studied, and the reaction mechanism is discussed. Low-dimensional Zn1–xCdxO structures have been obtained for CdCl2 concentrations in the deposition bath lower than 6 μM whereas at higher concentration it is admixed with crystallized CdO and the aspect ratio of the wires is decreased. According to scanning electron microscopy observations, the Zn1–xCdxO NWs have a higher aspect ratio (>30) than pure ZnO NWs (∼20) grown in similar conditions. Analyses show that the ZnO is doped with cadmium incorporated within ZnO NWs and that Cd doping increases with increasing Cd(II) content in the deposition bath. X-ray diffraction studies show increased lattice parameters in Cd-alloyed ZnO NWs. Photoluminescence studies ...