High Aspect Ratio Ternary Zn1–xCdxO Nanowires by Electrodeposition for Light-Emitting Diode Applications

High Aspect Ratio Ternary Zn1–xCdxO Nanowires by Electrodeposition for Light-Emitting Diode Applications
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DOI:
10.1021/jp202608e
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发表时间:
2011-07
影响因子:
3.7
通讯作者:
O. Lupan;T. Pauporté;T. L. Bahers;I. Ciofini;B. Viana
O. Lupan;T. Pauporté;T. L. Bahers;I. Ciofini;B. Viana
中科院分区:
化学3区
文献类型:
--
作者:
O. Lupan;T. Pauporté;T. L. Bahers;I. Ciofini;B. Viana

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我们提出了一个实验和计算相结合的方法来研究Zn 1-xCdxO纳米线(NWs)及其集成在发光二极管(LED)结构。在掺氟氧化锡和p-GaN衬底上电沉积了自支撑Zn 1-xCdxO纳米线。研究了其电化学行为,并对反应机理进行了探讨。当CdCl_2浓度低于6 μM时,得到了低维的Zn_(1-x)Cd_xO结构,而当CdCl_2浓度高于6 μM时,由于掺杂了结晶的CdO,线的长径比减小。根据扫描电子显微镜观察,Zn 1-xCdxO纳米线具有更高的纵横比(>30)比纯ZnO纳米线(1020)在类似的条件下生长。分析表明,ZnO掺杂的ZnO纳米线内纳入镉和Cd掺杂增加,增加Cd(II)的沉积浴中的含量。X射线衍射研究表明,增加的晶格参数在镉合金ZnO纳米线。光致发光研究…
We present a combined experimental and computational approach to study Zn1–xCdxO nanowires (NWs) and their integration in light-emitting diode (LED) structures. Self-standing Zn1–xCdxO NWs have been electrodeposited on fluorine-doped tin oxide and p-GaN substrates. The electrochemical behavior has been studied, and the reaction mechanism is discussed. Low-dimensional Zn1–xCdxO structures have been obtained for CdCl2 concentrations in the deposition bath lower than 6 μM whereas at higher concentration it is admixed with crystallized CdO and the aspect ratio of the wires is decreased. According to scanning electron microscopy observations, the Zn1–xCdxO NWs have a higher aspect ratio (>30) than pure ZnO NWs (∼20) grown in similar conditions. Analyses show that the ZnO is doped with cadmium incorporated within ZnO NWs and that Cd doping increases with increasing Cd(II) content in the deposition bath. X-ray diffraction studies show increased lattice parameters in Cd-alloyed ZnO NWs. Photoluminescence studies ...