Enhancement of transverse thermoelectric power factor in tilted Bi/Cu multilayer
Enhancement of transverse thermoelectric power factor in tilted Bi/Cu multilayer
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DOI：
10.1063/1.3081411
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发表时间：
2009-02-09
影响因子：
4
通讯作者：
Adachi, Hideaki
中科院分区：
文献类型：
--
作者：
Kanno, Tsutomu;Yotsuhashi, Satoshi;Adachi, Hideaki
我们研究了倾斜 Bi/Cu 多层的横向热电响应。通过等效电路模型估算表明，在最佳器件参数下，横向热电功率因数（PF）可以达到155μW/cm K-2。有限元分析证实了使用张量表示的估计的有效性，该表示隐含地假设了均匀各向异性。 Bi/Cu 多层是通过将熔融 Bi 压力注射到周期性切缝的 Cu 块中来制造的。制造样品的测量证实横向功率因数增强高达 50.1 μW/cm K-2，这比 Bi 成分的传统功率因数 34 μW/cm K-2 大约高 1.5 倍。
We investigated transverse thermoelectric response in tilted Bi/Cu multilayer. Estimation through an equivalent circuit model showed that transverse thermoelectric power factor (PF) reaching 155 mu W/cm K-2 is possible with optimum device parameters. Finite element analysis confirmed the validity of the estimation using tensorial representation, which implicitly assumes homogeneous anisotropy. The Bi/Cu multilayer was fabricated by pressure injection of molten Bi into a periodically slitted Cu block. The measurement of the fabricated sample verified an enhancement in transverse PF up to 50.1 mu W/cm K-2, which is approximately 1.5 times greater than the conventional PF of constituent Bi, 34 mu W/cm K-2.