Symmetric and asymmetric domain wall diodes in magnetic nanowires
Symmetric and asymmetric domain wall diodes in magnetic nanowires
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DOI：
10.1063/1.2794030
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发表时间：
2007-10-01
影响因子：
4
通讯作者：
Allwood, D. A.
中科院分区：
文献类型：
--
作者：
Bryan, M. T.;Schrefl, T.;Allwood, D. A.
微磁模拟揭示了横向畴壁如何与磁性纳米线中的三角形二极管耦合。对于对称二极管，耦合解释了所观察到的沿相反方向行进的磁畴壁脱钉所需的磁场差异。在不对称二极管中，壁-三角形相互作用可能导致沿相同方向行进的相反磁化壁的脱钉场存在数量级差异。因此，非对称结构将对称结构的二极管功能与畴壁手性过滤结合起来。我们还展示了如何使用两个背对背二极管来捕获畴壁并形成存储元件。 (C) 2007 年美国物理研究所。
Micromagnetic simulations reveal how transverse domain walls couple with triangular diodes in magnetic nanowires. For symmetric diodes, the coupling explains the observed differences in the magnetic field required to depin domain walls traveling in opposite directions. In asymmetric diodes, the wall-triangle interaction can lead to order-of-magnitude differences in the depinning fields of oppositely magnetized walls traveling in the same direction. The asymmetric structures therefore combine the diode function of the symmetric structures with domain wall chirality filtering. We also show how two back-to-back diodes may be used to trap a domain wall and form a memory element. (C) 2007 American Institute of Physics.