First observation of SiO2/Si(100) interfaces by spherical aberration-corrected high-resolution transmission electron microscopy.
First observation of SiO2/Si(100) interfaces by spherical aberration-corrected high-resolution transmission electron microscopy.
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首次通过球差校正高分辨率透射电子显微镜观察 SiO2/Si(100) 界面。
DOI：
10.1093/jmicro/52.1.69
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发表时间：
2003
期刊：
影响因子：
--
通讯作者：
N. Ikarashi
中科院分区：
文献类型：
--
作者：
N. Tanaka;J. Yamasaki;K. Usuda;N. Ikarashi
首次通过球差校正高分辨率透射电子显微镜以截面模式观察到SiO2/Si(100)界面。由于菲涅尔条纹在界面处没有对比，因此无需人工图像对比即可清晰地观察到界面结构。准确识别了 Si(100) 表面上的原子台阶和缺陷。此外，具有目标成像性能的图像模拟揭示了硅-硅键之间的氧原子柱。本仪器对于半导体科学和技术具有潜在用途，甚至可以用于界面处氧原子的分析。
SiO2/Si(100) interfaces were for the first time observed by a spherical aberration-corrected high-resolution transmission electron microscope in a cross-sectional mode. As the Fresnel fringes were not contrasted at the interfaces, the interfacial structures were clearly observed without the need for artificial image contrast. Atomic steps and defects on the Si(100) surfaces were accurately identified. Also, image simulations with the target imaging performance revealed oxygen atomic columns between silicon-silicon bonds. The present instrument is of potential use for semiconductor science and technology, even for the analysis of oxygen atoms at interfaces.