Investigation of IGBT switching energy loss and peak overvoltage using digital active gate drives
Investigation of IGBT switching energy loss and peak overvoltage using digital active gate drives
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DOI：
10.1109/compel.2017.8013407
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发表时间：
2017-07
期刊：
影响因子：
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通讯作者：
Gwilym T. Jones;Daniel J. Rogers
中科院分区：
文献类型：
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作者：
Gwilym T. Jones;Daniel J. Rogers
本文对采用有源栅极驱动开关的半桥绝缘栅双极晶体管(IGBT)转换器的开关能量损耗和峰值过电压进行了实验研究。系统地将一系列电压分布施加到IGBT门，并测量由此产生的开关行为，以获得每个门分布的开关能量损失和峰值过电压。描述了允许测试不同栅极波形的实验装置，并利用日益复杂的栅极电压波形找到了在设定的过电压极限下导通的最小可实现开关损耗。与简单的电压斜坡波形相比，使用最复杂的栅极电压波形可以实现24%的导通开关能量损失。当使用较复杂的栅极波形时，关断过电压被控制，而较简单的电压斜坡不影响关断电压过冲。
This paper presents an experimental investigation of the switching energy loss and peak overvoltage occurring in a half-bridge Insulated Gate Bipolar Transistor (IGBT) converter which is switched using an Active Gate Drive. A range of voltage profiles is systematically applied to the IGBT gate and the resulting switching behaviour is measured to obtain the switching energy loss and peak overvoltage for each gate profile. The experimental apparatus which allows different gate waveforms to be tested is described, and the minimum achievable switching loss for a set overvoltage limit is found for turn-on using gate voltage waveforms of increasing complexity. A reduction in turn-on switching energy loss of 24% is achieved with the most sophisticated gate voltage waveform tested compared to a simple voltage ramp waveform. Turn-off overvoltage is controlled when using more complex gate waveforms whereas simpler voltage ramping fails to influence the turn-off voltage overshoot.