Enhanced optical emission at MoS2-WS2 heterostructure interface with n-N junction
Enhanced optical emission at MoS2-WS2 heterostructure interface with n-N junction
复制标题
具有 n-N 结的 MoS2-WS2 异质结构界面处的增强光发射
DOI：
10.1016/j.apsusc.2022.154923
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发表时间：
2022
影响因子：
6.7
通讯作者：
Balakrishnan Viswanath
中科院分区：
文献类型：
--
作者：
Thakur Deepa;Sato Yukio;Sabarigresan M.;Ramadurai Ranjith;Balakrishnan Viswanath
原子薄过渡金属二硫化物异质结构在电子和光电子器件应用中具有重要的意义。由于在界面处具有不同寻常的电响应和光发射，原子薄异质结构的生长具有显著的重要性。这里，简单的化学气相沉积生长的n- n型mos2 - ws2异质结构被证明。观察到mos2 - ws2异质结构界面处的光致发光增强，界面处产生局部激子放大。利用像差校正扫描透射电镜对界面的原子水平结构进行了研究。利用微操纵器与扫描电镜结合，系统地研究了mos2 - ws2异质结构在n- nsemiconductor结内的电学特性。我们的微观和光谱学研究以及界面上的电学和光学响应为基于增强发射的二维异质结构的光学器件的开发提供了基础知识。
Atomically thin transition metal dichalcogenide based heterostructures are of significant interest for the electronic and optoelectronic device applications. Growth of atomically thin heterostructures have gained remarkable importance due to the unusual electrical response and optical emission at the interface. Here, facile chemical vapour deposition growth ofn-Ntype MoS2-WS2heterostructure is demonstrated. Multifold enhancement in photoluminescence emission at the interface of MoS2-WS2heterostructure with local excitonic amplifications arising at the interface is observed. The atomic level structure of interface has been investigated with the aid of aberration corrected scanning transmission electron microscopy. Electrical properties of MoS2-WS2heterostructure withn-Nsemiconductor junction are systematically probed using micromanipulators interfaced with scanning electron microscope. Our microscopic and spectroscopic investigations along with electrical and optical responses at the interface contribute to the fundamental knowledge to empower the development of optical devices based on two dimensional heterostructures with enhanced emissions.