Electrical injection Ga(AsBi)/(AlGa)As single quantum well laser
Electrical injection Ga(AsBi)/(AlGa)As single quantum well laser
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DOI：
10.1063/1.4811736
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发表时间：
2013-06-17
影响因子：
4
通讯作者：
Volz, K.
中科院分区：
文献类型：
--
作者：
Ludewig, P.;Knaub, N.;Volz, K.
Ga（AsBi）材料系统在高效率红外激光二极管领域中打开了机会。本文报道了在GaAs（001）衬底上用金属有机物气相外延方法生长的含2.2%Bi的稀铋化物Ga（AsBi）/（AlGa）As单量子阱激光器的生长、结构研究和激光性能。在室温下实现了电注入激光器工作，在发射波长近似为947 nm时，阈值电流密度为1.56 kA/cm（2）。这些来自宽面积器件的结果显示了基于这种新兴材料系统开发高效IR激光二极管的巨大前景。(C)2013 AIP Publishing LLC.
The Ga(AsBi) material system opens opportunities in the field of high efficiency infrared laser diodes. We report on the growth, structural investigations, and lasing properties of dilute bismide Ga(AsBi)/(AlGa)As single quantum well lasers with 2.2% Bi grown by metal organic vapor phase epitaxy on GaAs (001) substrates. Electrically injected laser operation at room temperature is achieved with a threshold current density of 1.56 kA/cm(2) at an emission wavelength of similar to 947 nm. These results from broad area devices show great promise for developing efficient IR laser diodes based on this emerging materials system. (C) 2013 AIP Publishing LLC.